Sotto, AGüder, HSPérez-Pastor, ASegura, AZúñiga, JMuñoz, V2024-09-182024-09-1820020895-79591477-2299https://doi.org/10.1080/08957950212792https://hdl.handle.net/20.500.12483/1063339th European-High-Pressure-Research-Group Meeting (EHPRG 39) -- SEP 16-19, 2001 -- SANTANDER, SPAINWe report on the pressure dependence of the bandgap bowing in the ZnTe1-xSex alloy, in the whole composition range. The bandgap bowing parameter is shown to increase almost linearly with pressure from 1.23 at ambient pressure to 1.6 at 7 GPa. Saturation effects observed in the pressure dependence for x = 0.1 and x = 0.2 are shown to be related to the direct-to-indirect crossover. Results are discussed and interpreted in the framework of structural relaxation models for gap bowing. A prediction of these models (the negative bowing of the Gamma(15) - X-1 transition) is shown to be compatible with the fact that the direct-to-indirect crossover pressure increases with the Se content.eninfo:eu-repo/semantics/closedAccessII-VI semiconductorssemiconductor alloygap bowingpressure dependenceConference Object22225726010.1080/089579502127922-s2.0-0346741303Q2WOS:000176460700005Q3