Sotto, AGüder, HSPérez-Pastor, ASegura, AMuñoz, VMuñoz, AQteish, A2024-09-182024-09-1820020895-79591477-2299https://doi.org/10.1080/08957950212802https://hdl.handle.net/20.500.12483/1063239th European-High-Pressure-Research-Group Meeting (EHPRG 39) -- SEP 16-19, 2001 -- SANTANDER, SPAINWe report on the optical properties of high pressure semiconducting phases in ZnTe1-xSex. In the Te rich side, the cinnabar phase is observed in the upstroke between typically 9.5 and 12.5 GPa with a pressure interval of existence that decreases with increasing the Se content. In most studied samples, the indirect absorption edge could be determined, with values of the bandgap increasing with the Se content and ranging from 1.2 to 1.7 eV In the downstroke, the cinnabar phase is observed in the whole composition range but its bandgap can not be unambiguously determined in the Se-rich side, as it coexists with rocksalt or zincblende phases. The indirect semiconducting rocksalt phase is observed in the Se-rich side, with an indirect bandgap of the order of 0.7 eV. Within the experimental errors, the bandgaps of both the cinnabar and NaCl phases are pressure insensitive, in agreement with first-principles pseudopotential band structure calculations, that predict very low pressure coefficients for both indirect transitions.eninfo:eu-repo/semantics/closedAccessII-VI semiconductor alloysphase transitionhigh pressure phasebandgapConference Object22231531810.1080/089579502128022-s2.0-0013441745Q2WOS:000176460700016Q3