Kahveci, O.Akkaya, A.Yucel, E.Aydin, R.Sahin, B.2024-09-182024-09-1820230272-88421873-3956https://doi.org/10.1016/j.ceramint.2023.02.007https://hdl.handle.net/20.500.12483/11743The p-n junction is the principal mode of optoelectronic semiconductor material. At present, we submit a solution-based attempt at the synthesis of nanostructured p-type CuO and n-type ZnO nanocomposite (NC) heterostructure films. Bare and Cobalt (Co)-doped CuO-ZnO NC films have been produced on glass slides using the SILAR (Successive Ionic Layer Adsorption and Reaction) method. The influence of Co-doping concentration on the physical characteristics of CuO-ZnO NC heterostructure films was investigated. XRD spectrums indicated the phase and structural purity of solution-based synthesized CuO-ZnO NC samples. The surface topographical, as well as optical and electrical properties of heterostructure films were, also investigated. While the bare CuO-ZnO NC film has a-38% transmission near 1000 nm wavelength region, the 2.0% Co-doped CuO-ZnO NC film has-31% of optical transmission. The sheet resistance value of the grown 2.0% Co:CuO-ZnO NC sample is almost 13 times lower than that of the bare CuO-ZnO NC sample at 400 K temperature. As a consequence, our attempt ensures a novel strategy for the production and performance optimization of CuO-ZnO NC hetero-structures in the implementation of optoelectronics.eninfo:eu-repo/semantics/closedAccessp-n heterostructure filmsCuOZnOCobalt dopingOptical propertiesArticle4910164581646610.1016/j.ceramint.2023.02.0072-s2.0-85148769134Q1WOS:000969178200001Q1