Use of n-type semiconductor silicon as substrate material for electrodeposition of Zn1-xFex alloy thin films

Ilimbey, IsmailYurdal, KaganBakkaloglu, Omer FarukKarahan, Ismail HakkiBedir, Metin2024-09-182024-09-1820140169-43321873-5584https://doi.org/10.1016/j.apsusc.2014.06.122https://hdl.handle.net/20.500.12483/97349th Nanoscience and Nanotechnology Conference (NANOTR) -- JUN 24-28, 2013 -- Erzurum, TURKEYZn1-xFex alloys were electrochemically deposited on semiconductor silicon substrates from sulfate bath. Effect of bath composition on phase formation, chemical composition, crystallite shape, electrical resistivity and magnetoresistance were investigated using appropriate characterization tools. It was shown that Zn-Fe alloys can be successfully deposited directly on semiconductor silicon substrate using electrodeposition technique. Iron content in films influences crystallite size, resistivity and magnetoresistance of films. (C) 2014 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessElectrodepositionZn-Fe alloysSilicon substrateMagnetoresistanceThin filmUse of n-type semiconductor silicon as substrate material for electrodeposition of Zn1-xFex alloy thin filmsConference Object31830530810.1016/j.apsusc.2014.06.1222-s2.0-84908368055Q1WOS:000344380500053Q1