Cetinkaya, S.Cetinkara, H. A.Kahraman, S.Bayansal, F.2024-09-182024-09-1820130950-0839https://doi.org/10.1080/09500839.2013.820362https://hdl.handle.net/20.500.12483/11167We report the fabrication of Al/n-ZnO/p-Si/Al diode structures with a flower-like ZnO layer. The average grain size, microstrain and dislocation density in the ZnO layer were determined as 25nm, 1.55x10(-3) and 3.23x10(13)cm(-2), respectively. From absorption spectra, the optical band gap was found to be approximate to 3.17eV. A red shift was attributed to non-stoichiometry arising from Zn+2 ions substituting for oxygen vacancies. The ideality factor was determined as 1.55. The barrier height was calculated as 0.71eV from I-V characteristics and 0.73eV using the Norde plots.eninfo:eu-repo/semantics/closedAccessmicroelectronicsoptical absorptiondiffractionelectrical conductivityZnOdiode structuresSCLCArticle93955055910.1080/09500839.2013.8203622-s2.0-84883554562Q3WOS:000323409700007Q3