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    Effects of ultraviolet light on B-doped CdS thin films prepared by spray pyrolysis method using perfume atomizer
    (Elsevier Science Bv, 2013) Novruzov, V. D.; Keskenler, E. F.; Tomakin, M.; Kahraman, S.; Gorur, O.
    Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 angstrom to 6.661 angstrom with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu2S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light. (C) 2013 Elsevier B.V. All rights reserved.
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    Influence of diffusion-annealing temperature on physical and mechanical properties of Cu-diffused bulk MgB2 superconductor
    (Springer, 2013) Dogruer, M.; Zalaoglu, Y.; Gorur, O.; Ozturk, O.; Yildirim, G.; Varilci, A.; Yucel, E.
    This study reports not only the effect of Cu diffusion on physical and mechanical properties of bulk MgB2 superconductors with the aid of Vickers microhardness (H-v) measurements but also the diffusion coefficient and the activation energy of copper (Cu) in the MgB2 system using the resistivity measurements for the first time. Cu diffusion is examined over the different annealing temperature such as 650, 700, 750, 800 and 850 A degrees C via the successive removal of thin layers and resistivity measurement of the sample. Further, Vickers microhardness, elastic modulus, yield strength, fracture toughness and brittleness index values of the samples studied are evaluated from microhardness measurements. It is found that all the results obtained depend strongly on the diffusion annealing temperature and applied load. The microhardness values increase with ascending the annealing temperature up to 850 A degrees C owing to the increment in the strength of the bonds between grains but decreasing with the enhancement in the applied load due to Indentation Size Effect behaviour of the bulk samples. Moreover, the diffusion coefficient is observed to enhance from 2.84 x 10(-8) to 3.22 x 10(-7) cm(2) s(-1) with the increase of the diffusion-annealing temperature, confirming that the Cu diffusion is more dominant at higher temperatures compared to lower ones. Besides, temperature dependence of the Cu diffusion coefficient is described by the Arrhenius relation D = 2.66 x 10(-3) exp(-1.09 +/- A 0.05 eV/k(B)T) and the related activation energy of the Cu ions in the MgB2 system is obtained to be about 1.09 eV. Based on the relatively low value of activation energy, the migration of the Cu ions primarily proceeds through defects such as pore surfaces and grain boundaries in the polycrystalline structure, resulting in the improvement of the physical and mechanical properties of the bulk MgB2 samples.