Optical and structural properties of Si-doped ZnO thin films

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dc.authoridSORAR, IDRIS/0000-0002-1082-7576
dc.authoridHinczewski, Michael/0000-0003-2837-7697
dc.contributor.authorSorar, I.
dc.contributor.authorSaygin-Hinczewski, D.
dc.contributor.authorHinczewski, M.
dc.contributor.authorTepehan, F. Z.
dc.date.accessioned2024-09-18T21:01:37Z
dc.date.available2024-09-18T21:01:37Z
dc.date.issued2011
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractThin films of Si-doped ZnO were prepared by the sol-gel spin coating method. The optical and structural properties of the films were investigated to see the effects of Si dopant concentration for three different heat treatments: 250, 350, and 550 degrees C. The optical characteristics for all the films were modeled using a Tauc-Lorentz-based dielectric function and an exponential Urbach tail in the sub-gap regime. Abstract: Transparent thin films of Si-doped ZnO were prepared by the sol-gel spin coating method. The optical and structural properties of the films were investigated to see the effects of Si dopant concentration for three different heat treatments: 250, 350, and 550 degrees C. Doping is most significant at the highest annealing temperature, where the structure of the films is crystalline at low Si values, and deteriorates as Si levels are increased. Optically, the result is increased transmittance and decreased reflectance with doping for the near-UV and visible ranges. The large changes in the near-UV region (20-50% increase in transmittance relative to pure ZnO) are due to weaker excitonic absorption as crystallinity is destroyed by doping. The films at 250 and 350 degrees C were amorphous, but the 350 degrees C samples showed optical trends qualitatively similar to 550 degrees C (though less pronounced). Band gaps were shifted slightly upwards with doping, though at higher annealing temperatures the values remained within 2% of the 3.3 eV pure ZnO result at all Si levels. AFM measurements of RMS surface roughness varied in a small range from less than or similar to 1 to 7 nm, with the roughest samples being pure ZnO at 250 degrees C, and low Si dopings at 550 degrees C. The optical characteristics for all the films, regardless of heat treatment or doping, were successfully modeled using a Tauc-Lorentz-based dielectric function, consisting of two oscillator terms describing near-band-gap absorption, and an exponential Urbach tail in the sub-gap regime. (C) 2011 Elsevier B. V. All rights reserved.en_US
dc.identifier.doi10.1016/j.apsusc.2011.03.142
dc.identifier.endpage7349en_US
dc.identifier.issn0169-4332
dc.identifier.issn1873-5584
dc.identifier.issue16en_US
dc.identifier.scopus2-s2.0-79955595103en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage7343en_US
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2011.03.142
dc.identifier.urihttps://hdl.handle.net/20.500.12483/12882
dc.identifier.volume257en_US
dc.identifier.wosWOS:000290015600054en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectZinc oxideen_US
dc.subjectSol-gelen_US
dc.subjectSi-doped ZnOen_US
dc.subjectOptical propertiesen_US
dc.subjectStructural propertiesen_US
dc.subjectTauc-Lorentz dielectric modelen_US
dc.titleOptical and structural properties of Si-doped ZnO thin filmsen_US
dc.typeArticleen_US

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