Pressure and temperature dependence of the band-gap in CdTe

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dc.authoridGonzalez, Jesus Antonio/0000-0002-0381-6393
dc.authoridMora-Sero, Ivan/0000-0003-2508-0994
dc.authoridMunoz-Sanjose, Vicente/0000-0002-3482-6957
dc.authoridSegura, Alfredo/0000-0002-9979-1302
dc.contributor.authorGilliland, S
dc.contributor.authorGonzález, J
dc.contributor.authorGüder, HS
dc.contributor.authorSegura, A
dc.contributor.authorMora, I
dc.contributor.authorMuñoz, V
dc.date.accessioned2024-09-18T21:01:37Z
dc.date.available2024-09-18T21:01:37Z
dc.date.issued2003
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description10th International Conference on High Pressures in Semiconductor Physics (HPSP-X) -- AUG 05-08, 2002 -- UNIV SURREY, GUILDFORD, ENGLANDen_US
dc.description.abstractIn this paper we report on isothermal compression measurements (up to 5 GPa and 500 K) of the optical absorption edge of 1 mum epitaxial layers of CdTe growth by metalorganic chemical vapor deposition (MOCVD) on GaS substrates. The isothermal blue shift under pressure of the direct energy gap (Gamma(15)(v) --> Gamma(1)(c)) in the zinc-blende phase is about 7.1 x 10(-2) eV GPa(-1) and is found to be independent of temperature within the experimental errors. The isobaric red shift in the stability range of the zinc-blende phase is about -3.76 x 10(-4) eV K-1. Regarding the phase transitions, no discontinuity in the energy gap has been found in the narrow pressure range where the cinnabar phase can be present. The transition pressure to the NaCl-type structure in CdTe is found to decrease with increasing temperature (294-500 K) following the law P-t = 4.1 GPa - 6.6 x 10(-3) (T - 273) (K).en_US
dc.identifier.doi10.1002/pssb.200301599
dc.identifier.endpage445en_US
dc.identifier.issn0370-1972
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-0037327659en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage441en_US
dc.identifier.urihttps://doi.org/10.1002/pssb.200301599
dc.identifier.urihttps://hdl.handle.net/20.500.12483/12893
dc.identifier.volume235en_US
dc.identifier.wosWOS:000181009000042en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.relation.ispartofPhysica Status Solidi B-Basic Researchen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAbsorptionen_US
dc.titlePressure and temperature dependence of the band-gap in CdTeen_US
dc.typeConference Objecten_US

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