Electronic structure and optical properties of CdTe rock-salt high pressure phase

dc.authoridMunoz-Sanjose, Vicente/0000-0002-3482-6957
dc.authoridMora-Sero, Ivan/0000-0003-2508-0994
dc.authoridGonzalez, Jesus Antonio/0000-0002-0381-6393
dc.authoridSegura, Alfredo/0000-0002-9979-1302
dc.authoridSans Tresserras, Juan Angel/0000-0001-9047-3992
dc.authoridMunoz, Alfonso/0000-0003-3347-6518
dc.contributor.authorGüder, HS
dc.contributor.authorGilliland, S
dc.contributor.authorSans, JA
dc.contributor.authorSegura, A
dc.contributor.authorGonzález, J
dc.contributor.authorMora, I
dc.contributor.authorMuñoz, V
dc.date.accessioned2024-09-18T21:01:38Z
dc.date.available2024-09-18T21:01:38Z
dc.date.issued2003
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description10th International Conference on High Pressures in Semiconductor Physics (HPSP-X) -- AUG 05-08, 2002 -- UNIV SURREY, GUILDFORD, ENGLANDen_US
dc.description.abstractThis paper reports on optical absorption and reflectance measurements in thin CdTe samples up to 15 GPa. All studied samples become virtually opaque at the pressure transition between the zinc-blende and rock-salt phases (3.9 GPa). As pressure increases up to 10 GPa, a relative transparency region is observed between 1.2 eV and 2.4 eV, whose high energy edge shifts to higher photon energies. Above 10 GPa the transparency region gradually shrinks and disappears at about 11 GPa. The low energy side of the absorption spectrum is attributed to free carrier absorption, as electronic structure calculations show that rock-salt CdTe is a semimetal or a low gap semiconductor. Band filling effects lower the band-to-band absorption coefficient and give rise to a transparency range, whose upper energy side is assigned to the direct transition at the r point, on the basis of its pressure coefficient. The shrinking and disappearance of the transparency region, along with a large increase of the reflectance in the mid infrared, is interpreted as the occurrence of a phase transition to the Cmcm metallic phase.en_US
dc.identifier.doi10.1002/pssb.200301612
dc.identifier.endpage513en_US
dc.identifier.issn0370-1972
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-0037324770en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage509en_US
dc.identifier.urihttps://doi.org/10.1002/pssb.200301612
dc.identifier.urihttps://hdl.handle.net/20.500.12483/12894
dc.identifier.volume235en_US
dc.identifier.wosWOS:000181009000055en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.relation.ispartofPhysica Status Solidi B-Basic Researchen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectTransitionsen_US
dc.titleElectronic structure and optical properties of CdTe rock-salt high pressure phaseen_US
dc.typeConference Objecten_US

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