On the effects of air-exposure-time and time-dependency of Pb/p-Si Schottky diodes

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dc.contributor.authorCetinkara, H. A.
dc.contributor.authorGuder, H. S.
dc.date.accessioned2024-09-18T20:56:52Z
dc.date.available2024-09-18T20:56:52Z
dc.date.issued2010
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractThe effects of air-exposure-time and time-dependency (ageing) on the Pb/p-Si Schottky diodes have been investigated by room temperature I-V and C-V measurements. The barrier height (BH) values between I-V and C-V measurements of the air-exposed samples have been found to be higher than those of the reference diode, and associated with the passivation of the intrinsic surface states on the cleaned Si surface. The ideality factor and the BH values of the air-exposed samples have reached to saturation after ten days air-exposure and the case has been interpreted as the saturation of the oxide layer thickness. The ageing has increased the ideality factors while decreasing the BHs of the samples with increasing ageing time. Both of the parameters have reached to the saturation at 720 h after metal deposition. The carrier concentrations of the air-exposed samples have been considerably lower than that of the reference diode and decreased with increasing exposure-time to air and ageing. This result has been attributed to the passivation of the acceptors by hydrogen atoms diffused into the semiconductor and so the surface Fermi level unpinning. The BH values determined from C-V measurements have reached to equilibrium BH values at 720 h after metal deposition as determined from I-V measurements. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.physb.2010.08.019
dc.identifier.endpage4487en_US
dc.identifier.issn0921-4526
dc.identifier.issue21en_US
dc.identifier.scopus2-s2.0-77957129270en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage4480en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2010.08.019
dc.identifier.urihttps://hdl.handle.net/20.500.12483/12145
dc.identifier.volume405en_US
dc.identifier.wosWOS:000283209400017en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottky barrier diodeen_US
dc.subjectAir exposureen_US
dc.subjectAgeingen_US
dc.subjectPassivationen_US
dc.titleOn the effects of air-exposure-time and time-dependency of Pb/p-Si Schottky diodesen_US
dc.typeArticleen_US

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