Temperature cycling of MOS-based radiation sensors

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dc.contributor.authorYilmaz, Ercan
dc.contributor.authorTuran, Rasit
dc.date.accessioned2024-09-18T20:32:58Z
dc.date.available2024-09-18T20:32:58Z
dc.date.issued2008
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractWe have studied dosimetric characteristics, linearity and performance of MOS structures as radiation sensors. This was performed by analyzing the correlation between irradiation dose and the shift in flat band voltage of MOS capacitors which were tested against gamma and beta radiations. Devices have been studied after repeated cycles of irradiation and annealing treatment under hydrogen and nitrogen ambient. Each cycle consists of gamma irradiation with 60 Gray-dose and an anneal at 200 degrees C for 30 min. Results obtained by high frequency C-V methods show that irradiation-annealing cycle correlates with the recovery of the measured signal. The charging-discharging mechanism during the cyclic treatment is discussed. The variation of the interface state density during the irradiation-annealing cycle was studied with a model based on conductance-voltage measurements. (c) 2007 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.sna.2007.07.001
dc.identifier.endpage5en_US
dc.identifier.issn0924-4247
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-36348978107en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage1en_US
dc.identifier.urihttps://doi.org/10.1016/j.sna.2007.07.001
dc.identifier.urihttps://hdl.handle.net/20.500.12483/11236
dc.identifier.volume141en_US
dc.identifier.wosWOS:000253390400001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Saen_US
dc.relation.ispartofSensors and Actuators A-Physicalen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMOS capacitoren_US
dc.subjectMOS devicesen_US
dc.subjectradiation effectsen_US
dc.subjectradiation sensoren_US
dc.subjectdosimeteren_US
dc.titleTemperature cycling of MOS-based radiation sensorsen_US
dc.typeArticleen_US

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