Barrier characteristics of Cd/p-GaTe Schottky diodes based on I-V-T measurements

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dc.authorscopusid56078567000
dc.authorscopusid6603295733
dc.authorscopusid6603892900
dc.authorscopusid7003858281
dc.authorscopusid7004059735
dc.contributor.authorAbay, B.
dc.contributor.authorÇankaya, G.
dc.contributor.authorGüder, H.S.
dc.contributor.authorEfeo?lu, H.
dc.contributor.authorYo?urtçu, Y.K.
dc.date.accessioned2024-09-19T15:48:48Z
dc.date.available2024-09-19T15:48:48Z
dc.date.issued2003
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractThe current-voltage (I-V) characteristics of Cd/p-GaTe Schottky barrier diodes were measured in the temperature range 90-330 K. The apparent barrier height and the ideality factor derived by using thermionic emission (TE) theory were found to be strongly temperature dependent. Evaluating forward I-V data reveals a decrease of zero-bias barrier height (?b0) but an increase of ideality factor (n) with decrease in temperature, and these changes are more pronounced below 150 K. The conventional Richardson plot exhibits nonlinearity below 150 K with the linear portion corresponding to an activation energy of 0.52 eV. The value of effective Richardson constant (A*) turns out to be 6.74 × 10-2 A K-2 cm-2 against the theoretical value of 119.4 A K-2 cm-2. It is demonstrated that the findings cannot be explained on the basis of tunnelling and image force lowering effects. Also, the concept of the flat-band barrier height (?bf) fails to account for the temperature dependence of the diode parameters. Finally, it is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. The inhomogeneities are considered to have Gaussian distribution with a mean barrier height of ??b0 = 0.886 eV and a standard deviation of ?s0 = 0.091 eV at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained as 0.875 eV and 62.2 A K-2 cm-2, respectively, by means of the modified Richardson plot, ln(J0/T2) - (q2?s02/2k2T2) versus 1000/T. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Schottky barrier on p-type GaTe can be successfully explained on the basis of TE mechanism with Gaussian distribution of the barrier heights.en_US
dc.identifier.doi10.1088/0268-1242/18/2/302
dc.identifier.endpage81en_US
dc.identifier.issn0268-1242
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-0037322548en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage75en_US
dc.identifier.urihttps://doi.org/10.1088/0268-1242/18/2/302
dc.identifier.urihttps://hdl.handle.net/20.500.12483/15313
dc.identifier.volume18en_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectActivation energyen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.subjectThermal effectsen_US
dc.subjectThermionic emissionen_US
dc.subjectImage force loweringen_US
dc.subjectSchottky barrier diodesen_US
dc.titleBarrier characteristics of Cd/p-GaTe Schottky diodes based on I-V-T measurementsen_US
dc.typeArticleen_US

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