Optimization and modelling of preparation conditions of CuS thin films deposited by successive ionic layer adsorption and reaction (SILAR) method using response surface methodology

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dc.authoridYucel, Yasin/0000-0002-8572-4213
dc.contributor.authorYucel, Yasin
dc.contributor.authorYucel, Ersin
dc.contributor.authorGokhan, Didem
dc.date.accessioned2024-09-18T21:02:57Z
dc.date.available2024-09-18T21:02:57Z
dc.date.issued2015
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractIn this study, CuS thin films were deposited on glass substrates by SILAR method with different pH, dipping time and dipping cycles. For the first time, response surface methodology was used for optimization CuS thin film coating parameters. 5-level-3-factor central composite design was employed to evaluate the effects of the deposition parameters (pH, dipping time and dipping cycles) on the optical band gap of the films. The significant level of the main effects and the interactions were investigated by analysis of variance. The morphological, structural and optical properties of the films were investigated by SEM, XRD and UV-Vis. The optimum pH, dipping time and dipping cycles were found to be 11.5, 31 s and 15 cycles, respectively. Under these conditions, the experimental band gap of CuS was observed as 2.18 eV which was well in close agreement with predicted value (2.11 eV) by the model. Quality of the film was improved after chemometrics optimization.en_US
dc.description.sponsorshipScientific Research Commission of Mustafa Kemal University [11700]en_US
dc.description.sponsorshipThis work is financially supported by the Scientific Research Commission of Mustafa Kemal University (Project No: 11700).en_US
dc.identifier.doi10.1007/s10854-015-2952-0
dc.identifier.endpage4112en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-84939957005en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage4105en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-015-2952-0
dc.identifier.urihttps://hdl.handle.net/20.500.12483/13163
dc.identifier.volume26en_US
dc.identifier.wosWOS:000354404800095en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOptical-Propertiesen_US
dc.subjectGrowthen_US
dc.titleOptimization and modelling of preparation conditions of CuS thin films deposited by successive ionic layer adsorption and reaction (SILAR) method using response surface methodologyen_US
dc.typeArticleen_US

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