Optical properties of high pressure phases in ZnTe1-xSex

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dc.authoridSegura, Alfredo/0000-0002-9979-1302
dc.authoridSotto, Arcadio/0000-0002-7145-9543
dc.authoridMunoz, Alfonso/0000-0003-3347-6518
dc.authoridMunoz-Sanjose, Vicente/0000-0002-3482-6957
dc.contributor.authorSotto, A
dc.contributor.authorGüder, HS
dc.contributor.authorPérez-Pastor, A
dc.contributor.authorSegura, A
dc.contributor.authorMuñoz, V
dc.contributor.authorMuñoz, A
dc.contributor.authorQteish, A
dc.date.accessioned2024-09-18T20:27:57Z
dc.date.available2024-09-18T20:27:57Z
dc.date.issued2002
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description39th European-High-Pressure-Research-Group Meeting (EHPRG 39) -- SEP 16-19, 2001 -- SANTANDER, SPAINen_US
dc.description.abstractWe report on the optical properties of high pressure semiconducting phases in ZnTe1-xSex. In the Te rich side, the cinnabar phase is observed in the upstroke between typically 9.5 and 12.5 GPa with a pressure interval of existence that decreases with increasing the Se content. In most studied samples, the indirect absorption edge could be determined, with values of the bandgap increasing with the Se content and ranging from 1.2 to 1.7 eV In the downstroke, the cinnabar phase is observed in the whole composition range but its bandgap can not be unambiguously determined in the Se-rich side, as it coexists with rocksalt or zincblende phases. The indirect semiconducting rocksalt phase is observed in the Se-rich side, with an indirect bandgap of the order of 0.7 eV. Within the experimental errors, the bandgaps of both the cinnabar and NaCl phases are pressure insensitive, in agreement with first-principles pseudopotential band structure calculations, that predict very low pressure coefficients for both indirect transitions.en_US
dc.description.sponsorshipEuropean High Pressure Res Grpen_US
dc.identifier.doi10.1080/08957950212802
dc.identifier.endpage318en_US
dc.identifier.issn0895-7959
dc.identifier.issn1477-2299
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-0013441745en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage315en_US
dc.identifier.urihttps://doi.org/10.1080/08957950212802
dc.identifier.urihttps://hdl.handle.net/20.500.12483/10632
dc.identifier.volume22en_US
dc.identifier.wosWOS:000176460700016en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherTaylor & Francis Ltden_US
dc.relation.ispartofHigh Pressure Researchen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectII-VI semiconductor alloysen_US
dc.subjectphase transitionen_US
dc.subjecthigh pressure phaseen_US
dc.subjectbandgapen_US
dc.titleOptical properties of high pressure phases in ZnTe1-xSexen_US
dc.typeConference Objecten_US

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