Production of p-CuO/n-ZnO:Co nanocomposite heterostructure thin films: An optoelectronic study
[ N/A ]
Tarih
2023
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Sci Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The p-n junction is the principal mode of optoelectronic semiconductor material. At present, we submit a solution-based attempt at the synthesis of nanostructured p-type CuO and n-type ZnO nanocomposite (NC) heterostructure films. Bare and Cobalt (Co)-doped CuO-ZnO NC films have been produced on glass slides using the SILAR (Successive Ionic Layer Adsorption and Reaction) method. The influence of Co-doping concentration on the physical characteristics of CuO-ZnO NC heterostructure films was investigated. XRD spectrums indicated the phase and structural purity of solution-based synthesized CuO-ZnO NC samples. The surface topographical, as well as optical and electrical properties of heterostructure films were, also investigated. While the bare CuO-ZnO NC film has a-38% transmission near 1000 nm wavelength region, the 2.0% Co-doped CuO-ZnO NC film has-31% of optical transmission. The sheet resistance value of the grown 2.0% Co:CuO-ZnO NC sample is almost 13 times lower than that of the bare CuO-ZnO NC sample at 400 K temperature. As a consequence, our attempt ensures a novel strategy for the production and performance optimization of CuO-ZnO NC hetero-structures in the implementation of optoelectronics.
Açıklama
Anahtar Kelimeler
p-n heterostructure films, CuO, ZnO, Cobalt doping, Optical properties
Kaynak
Ceramics International
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
49
Sayı
10
