A systematic study on MOS type radiation sensors

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dc.contributor.authorYilmaz, Ercan
dc.contributor.authorKaleli, Buket
dc.contributor.authorTuran, Rasit
dc.date.accessioned2024-09-18T20:32:58Z
dc.date.available2024-09-18T20:32:58Z
dc.date.issued2007
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractRadiation sensors based on metal oxide semiconductor (MOS) structure are useful because of their superior sensitivity as well as excellent compatibility with the existing microelectronic technology. In this paper, a systematic study of MOS capacitors built on p- and n-type Si substrates with different SiO2 thicknesses (10 nm, 50 nm, 100 nm and 240 nm) is presented. MOS device response to gamma radiation up to 256 Gray have been studied from the sensor application point of view. Variation of the radiation induced device response with oxide thickness, substrate type, applied bias and post annealing have been measured and discussed. Radiation induced charge in MOS devices is shown to be a strong function of the oxide thickness as expected. Application of a positive bias to the gate is found to enhance the device sensitivity for both n- and p-type devices. This is explained in terms of the involvement of the interface states in the sensing process. Devices have also been studied after repeated cycles of irradiation and annealing treatment under hydrogen atmosphere. Each cycle consists of gamma irradiation with 60 Gray dose and an anneal at 200 degrees C for 30 min. The charging-discharging mechanism during these cycles is discussed. (c) 2007 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.nimb.2007.08.081
dc.identifier.endpage292en_US
dc.identifier.issn0168-583X
dc.identifier.issn1872-9584
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-36048987799en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage287en_US
dc.identifier.urihttps://doi.org/10.1016/j.nimb.2007.08.081
dc.identifier.urihttps://hdl.handle.net/20.500.12483/11237
dc.identifier.volume264en_US
dc.identifier.wosWOS:000251873600013en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofNuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atomsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMOS capacitoren_US
dc.subjectMOS devicesen_US
dc.subjectradiation effectsen_US
dc.subjectradiation sensoren_US
dc.subjectdosimetersen_US
dc.titleA systematic study on MOS type radiation sensorsen_US
dc.typeArticleen_US

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