Influence of manganese concentration and annealing temperatures on the physical properties of CdO films grown by the SILAR method

Basit Öğe Kaydı
dc.authoridSahin, Bunyamin/0000-0001-7059-0315
dc.authoridBayansal, Fatih/0000-0001-9600-007X
dc.contributor.authorSahin, B.
dc.contributor.authorBayansal, F.
dc.contributor.authorYuksel, M.
dc.date.accessioned2024-09-18T20:33:06Z
dc.date.available2024-09-18T20:33:06Z
dc.date.issued2014
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractUndoped and doped Cadmium oxide (CdO) films with different Mn concentrations were prepared on glass substrates by the successive ionic layer adsorption and reaction method and annealed at two different temperatures. Structural, morphological and optical conditions were performed by XRD, scanning electron microscope (SEM) and UV-vis spectrum measurements. The deposited films were dense and they adhere well to the glass substrates. From the SEM photographs, it was seen that Mn doping concentration and annealing process affect the morphologies of the nanostructures. It was found that the growth process modifies the microstructures of the CdO films. XRD results and UV-vis analysis reveal that the crystal structure and optical band gap of the films could be adjusted by varying the Mn concentration and annealing temperature. The results also indicate that there is a direct dependence of the physical and optical properties of the metal oxide films on doping concentration and annealing process.en_US
dc.description.sponsorshipMustafa Kemal University (374) projecten_US
dc.description.sponsorshipThis work is supported by Mustafa Kemal University (374) project.en_US
dc.identifier.doi10.1080/14786435.2013.872812
dc.identifier.endpage963en_US
dc.identifier.issn1478-6435
dc.identifier.issn1478-6443
dc.identifier.issue9en_US
dc.identifier.scopus2-s2.0-84897654698en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage956en_US
dc.identifier.urihttps://doi.org/10.1080/14786435.2013.872812
dc.identifier.urihttps://hdl.handle.net/20.500.12483/11307
dc.identifier.volume94en_US
dc.identifier.wosWOS:000333484600008en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherTaylor & Francis Ltden_US
dc.relation.ispartofPhilosophical Magazineen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectnanostructuresen_US
dc.subjectscanning electron microscopyen_US
dc.subjectmanganeseen_US
dc.subjectoptical band gapen_US
dc.titleInfluence of manganese concentration and annealing temperatures on the physical properties of CdO films grown by the SILAR methoden_US
dc.typeArticleen_US

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