Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodes

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dc.authoridBayansal, Fatih/0000-0001-9600-007X
dc.authoridKahraman, suleyman/0000-0002-7730-6353
dc.authoridCetinkaya, Samed/0000-0002-7476-9467
dc.contributor.authorCetinkaya, S.
dc.contributor.authorCetinkara, H. A.
dc.contributor.authorBayansal, F.
dc.contributor.authorKahraman, S.
dc.date.accessioned2024-09-18T21:06:27Z
dc.date.available2024-09-18T21:06:27Z
dc.date.issued2013
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractCuO interlayers in the CuO/p-Si Schottky diodes were fabricated by using CBD and sol-gel methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the SEM images, it was seen that the film grown by CBD method is denser than the film grown by sol-gel method. This result is compatible with XRD results which show that the crystallization in CBD method is higher than it is in sol-gel method. For the electrical investigations, current-voltage characteristics of the diodes have been studied at room temperature. Conventional I-V and Norde's methods were used in order to determine the ideality factor, barrier height, and series resistance values. It was seen that the morphological and structural analysis are compatible with the results of electrical investigations.en_US
dc.description.sponsorshipScientific Research Commission of Mustafa Kemal University [1004 Y 0102, 1001 M 0115]en_US
dc.description.sponsorshipThis work is financially supported by the Scientific Research Commission of Mustafa Kemal University (project nos. 1004 Y 0102 and 1001 M 0115).en_US
dc.identifier.doi10.1155/2013/126982
dc.identifier.issn1537-744X
dc.identifier.pmid23766670en_US
dc.identifier.scopus2-s2.0-84878640502en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1155/2013/126982
dc.identifier.urihttps://hdl.handle.net/20.500.12483/13603
dc.identifier.wosWOS:000319922500001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakPubMeden_US
dc.language.isoenen_US
dc.publisherHindawi Publishing Corporationen_US
dc.relation.ispartofScientific World Journalen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectElectrical Characteristicsen_US
dc.subjectThermal-Oxidationen_US
dc.subjectCopperen_US
dc.subjectTemperatureen_US
dc.subjectContactsen_US
dc.subjectDensityen_US
dc.subjectFilmsen_US
dc.titleGrowth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p-Si Schottky Diodesen_US
dc.typeArticleen_US

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