Investigation of Multi-Phase Structure and Optoelectronic Performance of Bi-Doped (Cu-Zn) Oxide Composite Thin Films

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dc.authoridSahin, Bunyamin/0000-0001-7059-0315
dc.contributor.authorAltinay, Yasemin
dc.contributor.authorAkkaya, Abdullah
dc.contributor.authorAydin, Rasit
dc.contributor.authorSahin, Bunyamin
dc.date.accessioned2024-09-18T20:02:52Z
dc.date.available2024-09-18T20:02:52Z
dc.date.issued2023
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractIn this research, thin film composite structures were used to prepare optoelectronic devices from bare and Bi-substituted p-CuO/n-ZnO systems. The p-CuO/n-ZnO composite thin film structures were prepared by the SILAR technique, and the influences of two different Bi contents on the structure and main physical performances of the samples were investigated. The X-ray diffraction (XRD) technique showed that the composited thin film materials were multiphased in rutile hexagonal (wurtzite) phase (ZnO) and monoclinic tenorite phase (CuO) type crystal structure. The obtained surface morphological results presented that the structure exhibits an almost homogeneous, plate-like surface distribution, and depending on the increase of Bi concentration, the plate-like sheet area widens from similar to 2.5 mu m to 10 mu m and the layer boundaries decrease. FT-IR and Raman spectroscopy were used to investigate the various vibration and Raman active phonon modes of Bi:p-CuO/n-ZnO nanostructured heterostructures. For a comprehensive analysis of the optical bandgap of the fabricated composite samples, the estimated values were obtained from the Tauc plot. Produced samples exhibited an Ohmic behavior and dc resistivity values of films can be determined via Ohm's Law. The adjusted sheet resistance value of 11.51 M Omega/sq when the content of Bi 3.0 % in the growth bath.en_US
dc.description.sponsorshipTUBITAK ULAKBIM (The Scientific and Technological Research Council of Turkey) Read amp; Publish Programen_US
dc.description.sponsorshipThis study was supported by TUBITAK ULAKBIM (The Scientific and Technological Research Council of Turkey) Read & Publish Program.en_US
dc.identifier.doi10.1002/celc.202300208
dc.identifier.issn2196-0216
dc.identifier.issue17en_US
dc.identifier.scopus2-s2.0-85166438020en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1002/celc.202300208
dc.identifier.urihttps://hdl.handle.net/20.500.12483/8066
dc.identifier.volume10en_US
dc.identifier.wosWOS:001041975200001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.relation.ispartofChemelectrochemen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectBand gapen_US
dc.subjectCuOen_US
dc.subjectnanocompositeen_US
dc.subjectresistivityen_US
dc.subjectZnOen_US
dc.titleInvestigation of Multi-Phase Structure and Optoelectronic Performance of Bi-Doped (Cu-Zn) Oxide Composite Thin Filmsen_US
dc.typeArticleen_US

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