Effects of annealing on morphological, structural and electrical properties of thermally evaporated WO3 thin films

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dc.authoridUsta, Metin/0000-0002-7896-397X
dc.authoridKahraman, suleyman/0000-0002-7730-6353
dc.authoridBayansal, Fatih/0000-0001-9600-007X
dc.contributor.authorUsta, Metin
dc.contributor.authorKahraman, Suleyman
dc.contributor.authorBayansal, Fatih
dc.contributor.authorCetinkara, Haci A.
dc.date.accessioned2024-09-18T20:59:23Z
dc.date.available2024-09-18T20:59:23Z
dc.date.issued2012
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractTungsten trioxide (WO3) thin films were prepared by thermal evaporation method onto quartz substrates at room temperature. Effect of annealing temperature (from 200 to 800 degrees C) to morphology, crystallographic structure and electrical properties were investigated. In order to investigate the temperature dependant resistivity properties of the films dark current-voltage measurements were done at the temperatures of 30, 60, 90, 120 and 150 degrees C. From the AFM pictures it is seen that the increasing annealing temperature causes an increase in grain sizes. At elevated temperatures the grains combine to each other and thus form continuous and homogenous surfaces. From the XRD patterns it was seen that the as-prepared and annealed films at 200, 300, 310 and 320 degrees C were amorphous. On the other hand at 330 degrees C and higher temperatures the films were found as in crystallized structures (monoclinic phase). From the current-voltage measurements it was seen that the contacts areohmic and the current increased with increasing temperatures. From the calculated values it was seen that the produced films shows good semiconducting nature. (C) 2012 Elsevier Ltd. All rights reserved.en_US
dc.description.sponsorshipScientific Research Commission of Mustafa Kemal University [09M 2006]en_US
dc.description.sponsorshipThis work was supported by Scientific Research Commission of Mustafa Kemal University (Project No: 09M 2006).en_US
dc.identifier.doi10.1016/j.spmi.2012.05.008
dc.identifier.endpage335en_US
dc.identifier.issn0749-6036
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-84861918661en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage326en_US
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2012.05.008
dc.identifier.urihttps://hdl.handle.net/20.500.12483/12551
dc.identifier.volume52en_US
dc.identifier.wosWOS:000306727200019en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherAcademic Press Ltd- Elsevier Science Ltden_US
dc.relation.ispartofSuperlattices and Microstructuresen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectThin filmen_US
dc.subjectThermal evaporationen_US
dc.subjectAFMen_US
dc.subjectXRDen_US
dc.titleEffects of annealing on morphological, structural and electrical properties of thermally evaporated WO3 thin filmsen_US
dc.typeArticleen_US

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