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    Production of p-CuO/n-ZnO:Co nanocomposite heterostructure thin films: An optoelectronic study
    (Elsevier Sci Ltd, 2023) Kahveci, O.; Akkaya, A.; Yucel, E.; Aydin, R.; Sahin, B.
    The p-n junction is the principal mode of optoelectronic semiconductor material. At present, we submit a solution-based attempt at the synthesis of nanostructured p-type CuO and n-type ZnO nanocomposite (NC) heterostructure films. Bare and Cobalt (Co)-doped CuO-ZnO NC films have been produced on glass slides using the SILAR (Successive Ionic Layer Adsorption and Reaction) method. The influence of Co-doping concentration on the physical characteristics of CuO-ZnO NC heterostructure films was investigated. XRD spectrums indicated the phase and structural purity of solution-based synthesized CuO-ZnO NC samples. The surface topographical, as well as optical and electrical properties of heterostructure films were, also investigated. While the bare CuO-ZnO NC film has a-38% transmission near 1000 nm wavelength region, the 2.0% Co-doped CuO-ZnO NC film has-31% of optical transmission. The sheet resistance value of the grown 2.0% Co:CuO-ZnO NC sample is almost 13 times lower than that of the bare CuO-ZnO NC sample at 400 K temperature. As a consequence, our attempt ensures a novel strategy for the production and performance optimization of CuO-ZnO NC hetero-structures in the implementation of optoelectronics.
  • Küçük Resim
    Öğe
    Synthesis of Al and In dual-doped CuO nanostructures via SILAR method: Structural, optical and electrical properties
    (Elsevier, 2023) Kahveci, O.; Akkaya, A.; Aydin, R.; Sahin, B.; Ayyildiz, E.
    In this article, we investigated the doping characteristics of Al-doped CuO (ACO), and Al/In co-doped CuO (AICO) thin films, which were synthesized on glass substrates, via the solution-based successive ionic layer adsorption and reaction (SILAR) technique. The surface morphological, chemical composition, structural, optical, and electrical properties of the nanocrystalline films were characterized by Field Emission Scanning Electron Microscopy (FE-SEM), Energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), Fourier-transform Infrared Spectroscopy (FTIR), Ultraviolet-visible (UV-vis.) spectrophotometry, and Transmission Line Method (TLM), respectively. Surface morphology studies exhibited that a decrease in the films' thickness caused an increment in the optical transmittance. XRD patterns displayed that the obtained samples were polycrystalline and crystallized in a bare CuO monoclinic structure. FTIR studies of the CuO samples displayed that Al and In codoping influenced the forms and the violence of the absorption bands. The optical bandgap energy of bare CuO was determined to increase from 1.45 to 1.78 eV as a result of the co-doping. The substitution of In displayed in the irregularity of the morphology, owing to its wide ionic radius, which caused an increase in band gap energy and a decrease in resistance. The co-doping of Al and In is hence anticipated to ensure an extensive range of physical and optical properties of nanostructured metal oxide samples for a variety of technological applications.