Optimization of growth parameters for absorber material SnS thin films grown by SILAR method using response surface methodology
Yükleniyor...
Dosyalar
Tarih
2017
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this paper, SnS films were deposited on glass substrates by successive ionic layer adsorption and reaction method under different deposition conditions. Quality of semiconductor thin films depends on their deposition parameters. The deposition process was optimized by the application of five-level-three-factor central composite design. Response surface methodology was used to optimize deposition parameters including temperature of precursor solutions (27-43 degrees C), dipping time (3-37 s) and dipping cycles (23-57 cycles) for deposition of the SnS thin films. The effect of the deposition parameters on the film growth has been studied using the experimental design methodology. The optimum fabrication conditions were found to be 40 degrees C (temperature), 23.4 s (dipping time) and 50 cycles (dipping cycles), respectively. Under optimum terms, the E-g value of SnS nanostructures calculated as 1.73 eV. The optimized value showed a good fit to the predicted value (1.67 eV). In addition, the structural, optical and morphological properties of thin films were investigated.
Açıklama
Anahtar Kelimeler
Ionic Layer Adsorption, Deposition Conditions, Optical-Properties, Thickness
Kaynak
Journal of Materials Science-Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
28
Sayı
2
