Optimization of growth parameters for absorber material SnS thin films grown by SILAR method using response surface methodology

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dc.authoridYucel, Yasin/0000-0002-8572-4213
dc.contributor.authorYucel, Ersin
dc.contributor.authorYucel, Yasin
dc.contributor.authorDurak, Mustafa
dc.date.accessioned2024-09-18T21:02:57Z
dc.date.available2024-09-18T21:02:57Z
dc.date.issued2017
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractIn this paper, SnS films were deposited on glass substrates by successive ionic layer adsorption and reaction method under different deposition conditions. Quality of semiconductor thin films depends on their deposition parameters. The deposition process was optimized by the application of five-level-three-factor central composite design. Response surface methodology was used to optimize deposition parameters including temperature of precursor solutions (27-43 degrees C), dipping time (3-37 s) and dipping cycles (23-57 cycles) for deposition of the SnS thin films. The effect of the deposition parameters on the film growth has been studied using the experimental design methodology. The optimum fabrication conditions were found to be 40 degrees C (temperature), 23.4 s (dipping time) and 50 cycles (dipping cycles), respectively. Under optimum terms, the E-g value of SnS nanostructures calculated as 1.73 eV. The optimized value showed a good fit to the predicted value (1.67 eV). In addition, the structural, optical and morphological properties of thin films were investigated.en_US
dc.identifier.doi10.1007/s10854-016-5788-3
dc.identifier.endpage2214en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-84990898429en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage2206en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-016-5788-3
dc.identifier.urihttps://hdl.handle.net/20.500.12483/13165
dc.identifier.volume28en_US
dc.identifier.wosWOS:000394232600138en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectIonic Layer Adsorptionen_US
dc.subjectDeposition Conditionsen_US
dc.subjectOptical-Propertiesen_US
dc.subjectThicknessen_US
dc.titleOptimization of growth parameters for absorber material SnS thin films grown by SILAR method using response surface methodologyen_US
dc.typeArticleen_US

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