Process optimization of deposition conditions of PbS thin films grown by a successive ionic layer adsorption and reaction (SILAR) method using response surface methodology

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dc.authoridYucel, Yasin/0000-0002-8572-4213
dc.contributor.authorYucel, Ersin
dc.contributor.authorYucel, Yasin
dc.contributor.authorBeleli, Buse
dc.date.accessioned2024-09-18T20:11:43Z
dc.date.available2024-09-18T20:11:43Z
dc.date.issued2015
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractIn this study, lead sulfide (PbS) thin films were synthesized by a successive ionic layer adsorption and reaction (SILAR) method with different pH, dipping time and dipping cycles. Response surface methodology (RSM) and central composite design (CCD) were successfully used to optimize the PbS films deposition parameters and understand the significance and interaction of the factors affecting the film quality. 5-level-3-factor central composite design was employed to evaluate the effects of the deposition parameters (pH, dipping time and dipping cycles) on the response (the optical band gap of the films). Data obtained from RSM were subjected to the analysis of variance (ANOVA) and analyzed using a second order polynomial equation. The optimal conditions for the PbS films deposition have been found to be pH of 9.1, dipping time of 10 s and dipping cycles of 10 cycles. The predicted band gap of PbS film was 2.13 eV under the optimal conditions. Verification experiment (2.24 eV) confirmed the validity of the predicted model. The film structures were characterized by X-ray diffractometer (XRD). Morphological properties of the films were studied with a scanning electron microscopy (SEM). The optical properties of the films were investigated using a UV-visible spectrophotometer. (C) 2015 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jcrysgro.2015.04.018
dc.identifier.endpage7en_US
dc.identifier.issn0022-0248
dc.identifier.issn1873-5002
dc.identifier.scopus2-s2.0-84928814471en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1en_US
dc.identifier.urihttps://doi.org/10.1016/j.jcrysgro.2015.04.018
dc.identifier.urihttps://hdl.handle.net/20.500.12483/9035
dc.identifier.volume422en_US
dc.identifier.wosWOS:000355018600001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofJournal of Crystal Growthen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectComputer simulationen_US
dc.subjectGrowth from solutionsen_US
dc.subjectSulfidesen_US
dc.subjectSemiconducting lead compoundsen_US
dc.titleProcess optimization of deposition conditions of PbS thin films grown by a successive ionic layer adsorption and reaction (SILAR) method using response surface methodologyen_US
dc.typeArticleen_US

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