Cu2SnS3 absorber thin films prepared via successive ionic layer adsorption and reaction method
Yükleniyor...
Tarih
2013
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Carl Hanser Verlag
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this paper, we report the production of Cu2SnS3 thin films with high phase purity via successive ionic layer adsorption and reaction method on soda lime glass substrates. Structural, morphological, compositional, optical and electrical investigations were carried out. The X-ray diffraction patterns of the samples matched very well with the reference pattern and proved the polycrystalline nature of the films. As a secondary phase, one weak peak indicating covallite Cu2-xS phase was observed in the pattern of the sample deposited by using equimolar Cu and Sn. The surface morphologies of the films were found to be continuous and composed of homogeneously distributed large grains. From the reflectance and transmittance data, the optical absorption coefficient values of the films were found to be about 10(4) cm(-1) and the films were found to be almost opaque in the wavelengths from 200 to 600 nm with a small reflectivity of about 10%. Band gap values of the films decreased from 1.45 to 1.35 eV with decreasing Cu content. Electrical characterization showed that the films were p-type semiconductor. Two different impurity levels for each film were found via resistivity-temperature characteristics.
Açıklama
Anahtar Kelimeler
Cu2SnS3, SILAR, Thin film, Solar cell, Optical absorption
Kaynak
International Journal of Materials Research
WoS Q Değeri
Q2
Scopus Q Değeri
Q3
Cilt
104
Sayı
10
