Cu2SnS3 absorber thin films prepared via successive ionic layer adsorption and reaction method

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dc.authoridKahraman, suleyman/0000-0002-7730-6353
dc.authoridCetinkaya, Samed/0000-0002-7476-9467
dc.contributor.authorKahraman, Suleyman
dc.contributor.authorCetinkaya, Samed
dc.contributor.authorCakmak, Haci Mustafa
dc.contributor.authorCetinkara, Haci Ali
dc.contributor.authorGuder, Husnu Salih
dc.date.accessioned2024-09-18T20:13:36Z
dc.date.available2024-09-18T20:13:36Z
dc.date.issued2013
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractIn this paper, we report the production of Cu2SnS3 thin films with high phase purity via successive ionic layer adsorption and reaction method on soda lime glass substrates. Structural, morphological, compositional, optical and electrical investigations were carried out. The X-ray diffraction patterns of the samples matched very well with the reference pattern and proved the polycrystalline nature of the films. As a secondary phase, one weak peak indicating covallite Cu2-xS phase was observed in the pattern of the sample deposited by using equimolar Cu and Sn. The surface morphologies of the films were found to be continuous and composed of homogeneously distributed large grains. From the reflectance and transmittance data, the optical absorption coefficient values of the films were found to be about 10(4) cm(-1) and the films were found to be almost opaque in the wavelengths from 200 to 600 nm with a small reflectivity of about 10%. Band gap values of the films decreased from 1.45 to 1.35 eV with decreasing Cu content. Electrical characterization showed that the films were p-type semiconductor. Two different impurity levels for each film were found via resistivity-temperature characteristics.en_US
dc.description.sponsorshipScientific Research Commission of Mustafa Kemal University [1204D0102]en_US
dc.description.sponsorshipWe would like to thank Assist. Prof. Slavko Bernik for helpful discussions and assistance during the study and to Ms. Mateja Podlogar for her support during the characterizations. The financial support from Scientific Research Commission of Mustafa Kemal University (Project No: 1204D0102) is greatly appreciated.en_US
dc.identifier.doi10.3139/146.110957
dc.identifier.endpage1027en_US
dc.identifier.issn1862-5282
dc.identifier.issn2195-8556
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-84893616341en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage1020en_US
dc.identifier.urihttps://doi.org/10.3139/146.110957
dc.identifier.urihttps://hdl.handle.net/20.500.12483/9280
dc.identifier.volume104en_US
dc.identifier.wosWOS:000326126800013en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherCarl Hanser Verlagen_US
dc.relation.ispartofInternational Journal of Materials Researchen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCu2SnS3en_US
dc.subjectSILARen_US
dc.subjectThin filmen_US
dc.subjectSolar cellen_US
dc.subjectOptical absorptionen_US
dc.titleCu2SnS3 absorber thin films prepared via successive ionic layer adsorption and reaction methoden_US
dc.typeArticleen_US

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