Characteristics of ZnO thin films doped by various elements
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Dosyalar
Tarih
2013
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Bv
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We have investigated the effects of Al, K and Co dopant elements on the properties of ZnO thin films deposited by CBD method on glass substrates. Changing in morphology, structural parameters, ionization energies of impurity levels, absorption behavior and optical band gap values were investigated through scanning electron microscopy (SEM), X-Ray diffraction (XRD), resistance-temperature measurement (R-T) and ultraviolet-visible spectroscopy (UV-vis) techniques. From the SEM observations, various morphologies (rod-like, flower-like and rice-like) were observed. Those morphological variations were attributed to the change in stable growth mechanism of intrinsic ZnO, induced by different atomic radius and different electronegativity of dopants. XRD results indicated that all orientations are well indexed to hexagonal phase crystalline ZnO. The impurity level ionization energy values (Delta E) were estimated as 0.32/0.13/0.07 eV; 0.34/0.15 eV; 0.40/0.13 eV and 0.48/0.22 eV for the Al, K, Co doped samples and i-ZnO, respectively. Optical band gap values were found that the doped samples' were higher than the intrinsic one's. This increasing (blue shift) was attributed to a deterioration which occurred in the lattice of the structures after doping. This effect was also supported by the structural results. (C) 2012 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Crystal structure, Growth from solutions, Oxides, Semiconducting II-VI materials
Kaynak
Journal of Crystal Growth
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
363
