Characteristics of ZnO thin films doped by various elements

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dc.authoridCetinkaya, Samed/0000-0002-7476-9467
dc.authoridKahraman, suleyman/0000-0002-7730-6353
dc.authoridBayansal, Fatih/0000-0001-9600-007X
dc.contributor.authorKahraman, S.
dc.contributor.authorCakmak, H. M.
dc.contributor.authorCetinkaya, S.
dc.contributor.authorBayansal, F.
dc.contributor.authorCetinkara, H. A.
dc.contributor.authorGuder, H. S.
dc.date.accessioned2024-09-18T20:13:35Z
dc.date.available2024-09-18T20:13:35Z
dc.date.issued2013
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractWe have investigated the effects of Al, K and Co dopant elements on the properties of ZnO thin films deposited by CBD method on glass substrates. Changing in morphology, structural parameters, ionization energies of impurity levels, absorption behavior and optical band gap values were investigated through scanning electron microscopy (SEM), X-Ray diffraction (XRD), resistance-temperature measurement (R-T) and ultraviolet-visible spectroscopy (UV-vis) techniques. From the SEM observations, various morphologies (rod-like, flower-like and rice-like) were observed. Those morphological variations were attributed to the change in stable growth mechanism of intrinsic ZnO, induced by different atomic radius and different electronegativity of dopants. XRD results indicated that all orientations are well indexed to hexagonal phase crystalline ZnO. The impurity level ionization energy values (Delta E) were estimated as 0.32/0.13/0.07 eV; 0.34/0.15 eV; 0.40/0.13 eV and 0.48/0.22 eV for the Al, K, Co doped samples and i-ZnO, respectively. Optical band gap values were found that the doped samples' were higher than the intrinsic one's. This increasing (blue shift) was attributed to a deterioration which occurred in the lattice of the structures after doping. This effect was also supported by the structural results. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipScientific Research Commission of Mustafa Kemal University [1102 M 0101]en_US
dc.description.sponsorshipThis work was supported by Scientific Research Commission of Mustafa Kemal University (Project no: 1102 M 0101).en_US
dc.identifier.doi10.1016/j.jcrysgro.2012.10.018
dc.identifier.endpage92en_US
dc.identifier.issn0022-0248
dc.identifier.scopus2-s2.0-84887845580en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage86en_US
dc.identifier.urihttps://doi.org/10.1016/j.jcrysgro.2012.10.018
dc.identifier.urihttps://hdl.handle.net/20.500.12483/9277
dc.identifier.volume363en_US
dc.identifier.wosWOS:000313205400014en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofJournal of Crystal Growthen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCrystal structureen_US
dc.subjectGrowth from solutionsen_US
dc.subjectOxidesen_US
dc.subjectSemiconducting II-VI materialsen_US
dc.titleCharacteristics of ZnO thin films doped by various elementsen_US
dc.typeArticleen_US

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