Hydrostatic pressure dependence of interface state density of Cd/n-type GaAs Schottky barrier diodes
Yükleniyor...
Tarih
2010
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The interface state density obtained from current-voltage (I-V) characteristics of Cd/n-type GaAs Schottky barrier diodes (SBDs) at room temperature under hydrostatic pressure was investigated. SBD parameters such as ideality factor (n), series resistance (R-s), and barrier height (phi(b)), were obtained from I-V measurements using Cheung's method. The diode parameters, such as ideality factor, series resistance, and barrier heights, were found in the range of 1.464-1.474, 0.995-4.359 k Omega and 0.739-0.777 eV, respectively, with sweeping pressure. The diode shows non-ideal I-V behaviors with an ideality factor greater than unity. Additionally, the energy distribution of interface state density was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The results have shown that the presence of the interfacial native oxide layer between the metal and the semiconductor seriously affects interface state density under hydrostatic pressure. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Ideality factor, Schottky contact, Series resistance, Interface states distribution, Schottky barrier height, GaAs, Hydrostatic pressure
Kaynak
Physica B-Condensed Matter
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
405
Sayı
1
