Hydrostatic pressure dependence of interface state density of Cd/n-type GaAs Schottky barrier diodes

Basit Öğe Kaydı
dc.authoridCankaya, Guven/0000-0003-2932-1695
dc.authoridSONMEZOGLU, Savas/0000-0002-6011-3504
dc.authoridBayansal, Fatih/0000-0001-9600-007X
dc.contributor.authorSonmezoglu, Savas
dc.contributor.authorBayansal, Fatih
dc.contributor.authorCankaya, Gueven
dc.date.accessioned2024-09-18T20:27:57Z
dc.date.available2024-09-18T20:27:57Z
dc.date.issued2010
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractThe interface state density obtained from current-voltage (I-V) characteristics of Cd/n-type GaAs Schottky barrier diodes (SBDs) at room temperature under hydrostatic pressure was investigated. SBD parameters such as ideality factor (n), series resistance (R-s), and barrier height (phi(b)), were obtained from I-V measurements using Cheung's method. The diode parameters, such as ideality factor, series resistance, and barrier heights, were found in the range of 1.464-1.474, 0.995-4.359 k Omega and 0.739-0.777 eV, respectively, with sweeping pressure. The diode shows non-ideal I-V behaviors with an ideality factor greater than unity. Additionally, the energy distribution of interface state density was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The results have shown that the presence of the interfacial native oxide layer between the metal and the semiconductor seriously affects interface state density under hydrostatic pressure. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.physb.2009.08.083
dc.identifier.endpage290en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-71549115153en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage287en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2009.08.083
dc.identifier.urihttps://hdl.handle.net/20.500.12483/10628
dc.identifier.volume405en_US
dc.identifier.wosWOS:000273091800054en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectIdeality factoren_US
dc.subjectSchottky contacten_US
dc.subjectSeries resistanceen_US
dc.subjectInterface states distributionen_US
dc.subjectSchottky barrier heighten_US
dc.subjectGaAsen_US
dc.subjectHydrostatic pressureen_US
dc.titleHydrostatic pressure dependence of interface state density of Cd/n-type GaAs Schottky barrier diodesen_US
dc.typeReview Articleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
[ N/A ]
İsim:
Tam Metin / Full Text
Boyut:
248.12 KB
Biçim:
Adobe Portable Document Format
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu