Characterization of Al/n-ZnO/p-Si/Al structure with low-cost solution-grown ZnO layer
Yükleniyor...
Tarih
2013
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Taylor & Francis Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We report the fabrication of Al/n-ZnO/p-Si/Al diode structures with a flower-like ZnO layer. The average grain size, microstrain and dislocation density in the ZnO layer were determined as 25nm, 1.55x10(-3) and 3.23x10(13)cm(-2), respectively. From absorption spectra, the optical band gap was found to be approximate to 3.17eV. A red shift was attributed to non-stoichiometry arising from Zn+2 ions substituting for oxygen vacancies. The ideality factor was determined as 1.55. The barrier height was calculated as 0.71eV from I-V characteristics and 0.73eV using the Norde plots.
Açıklama
Anahtar Kelimeler
microelectronics, optical absorption, diffraction, electrical conductivity, ZnO, diode structures, SCLC
Kaynak
Philosophical Magazine Letters
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
93
Sayı
9
