Characterization of Al/n-ZnO/p-Si/Al structure with low-cost solution-grown ZnO layer

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dc.authoridBayansal, Fatih/0000-0001-9600-007X
dc.authoridKahraman, suleyman/0000-0002-7730-6353
dc.authoridCetinkaya, Samed/0000-0002-7476-9467
dc.contributor.authorCetinkaya, S.
dc.contributor.authorCetinkara, H. A.
dc.contributor.authorKahraman, S.
dc.contributor.authorBayansal, F.
dc.date.accessioned2024-09-18T20:32:51Z
dc.date.available2024-09-18T20:32:51Z
dc.date.issued2013
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractWe report the fabrication of Al/n-ZnO/p-Si/Al diode structures with a flower-like ZnO layer. The average grain size, microstrain and dislocation density in the ZnO layer were determined as 25nm, 1.55x10(-3) and 3.23x10(13)cm(-2), respectively. From absorption spectra, the optical band gap was found to be approximate to 3.17eV. A red shift was attributed to non-stoichiometry arising from Zn+2 ions substituting for oxygen vacancies. The ideality factor was determined as 1.55. The barrier height was calculated as 0.71eV from I-V characteristics and 0.73eV using the Norde plots.en_US
dc.description.sponsorshipScientific Research Commission of Mustafa Kemal University [1004 Y 0102, 1102M 0101]en_US
dc.description.sponsorshipThis work was financially supported by the Scientific Research Commission of Mustafa Kemal University (Project Nos: 1004 Y 0102 and 1102M 0101).en_US
dc.identifier.doi10.1080/09500839.2013.820362
dc.identifier.endpage559en_US
dc.identifier.issn0950-0839
dc.identifier.issue9en_US
dc.identifier.scopus2-s2.0-84883554562en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage550en_US
dc.identifier.urihttps://doi.org/10.1080/09500839.2013.820362
dc.identifier.urihttps://hdl.handle.net/20.500.12483/11167
dc.identifier.volume93en_US
dc.identifier.wosWOS:000323409700007en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherTaylor & Francis Ltden_US
dc.relation.ispartofPhilosophical Magazine Lettersen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectmicroelectronicsen_US
dc.subjectoptical absorptionen_US
dc.subjectdiffractionen_US
dc.subjectelectrical conductivityen_US
dc.subjectZnOen_US
dc.subjectdiode structuresen_US
dc.subjectSCLCen_US
dc.titleCharacterization of Al/n-ZnO/p-Si/Al structure with low-cost solution-grown ZnO layeren_US
dc.typeArticleen_US

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