Electrical characterization of GaTe and GaTe:Cu semiconductor compounds
[ N/A ]
Tarih
2001
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Electrical properties of GaTe and GaTe:Cu binary compound semiconductors were investigated by Hall effect and resistivity measurements in the 77-320 K temperature range. Donor and acceptor densities, compensation ratios, acceptor ionization energies, valence band effective mass of holes and effective density of states in valence band were determined for the undoped and Cu doped samples using the single donor-single acceptor analysis of the hole concentration. Temperature coefficient of the hole mobility was determined and compared with related theories.
Electrical properties of GaTe and GaTe:Cu binary compound semiconductors were investigated by Hall effect and resistivity measurements in the 77-320 K temperature range. Donor and acceptor densities, compensation ratios, acceptor ionization energies, valence band effective mass of holes and effective density of states in valence band were determined for the undoped and Cu doped samples using the single donor-single acceptor analysis of the hole concentration. Temperature coefficient of the hole mobility was determined and compared with related theories.
Electrical properties of GaTe and GaTe:Cu binary compound semiconductors were investigated by Hall effect and resistivity measurements in the 77-320 K temperature range. Donor and acceptor densities, compensation ratios, acceptor ionization energies, valence band effective mass of holes and effective density of states in valence band were determined for the undoped and Cu doped samples using the single donor-single acceptor analysis of the hole concentration. Temperature coefficient of the hole mobility was determined and compared with related theories.
Açıklama
Anahtar Kelimeler
Fizik, Uygulamalı
Kaynak
Turkish Journal of Physics
WoS Q Değeri
Scopus Q Değeri
Q2
Cilt
25
Sayı
6
