Electrical characterization of GaTe and GaTe:Cu semiconductor compounds

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dc.contributor.authorHüsnü Salih Güder
dc.contributor.authorBahattin Abay
dc.contributor.authorHasan Efeoğlu
dc.contributor.authorCevdet Coşkun
dc.contributor.authorŞakir Aydoğan
dc.contributor.authorYahya Kemal Yoğurtçu
dc.date.accessioned2019-07-16T15:47:31Z
dc.date.available2019-07-16T15:47:31Z
dc.date.issued2001
dc.departmentHatay Mustafa Kemal Üniversitesien_US
dc.description.abstractElectrical properties of GaTe and GaTe:Cu binary compound semiconductors were investigated by Hall effect and resistivity measurements in the 77-320 K temperature range. Donor and acceptor densities, compensation ratios, acceptor ionization energies, valence band effective mass of holes and effective density of states in valence band were determined for the undoped and Cu doped samples using the single donor-single acceptor analysis of the hole concentration. Temperature coefficient of the hole mobility was determined and compared with related theories.en_US
dc.description.abstractElectrical properties of GaTe and GaTe:Cu binary compound semiconductors were investigated by Hall effect and resistivity measurements in the 77-320 K temperature range. Donor and acceptor densities, compensation ratios, acceptor ionization energies, valence band effective mass of holes and effective density of states in valence band were determined for the undoped and Cu doped samples using the single donor-single acceptor analysis of the hole concentration. Temperature coefficient of the hole mobility was determined and compared with related theories.en_US
dc.identifier.endpage527en_US
dc.identifier.issn1300-0101
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-0034747874en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage523en_US
dc.identifier.urihttps://trdizin.gov.tr/publication/paper/detail/TXpNMk5UTXo=
dc.identifier.urihttps://hdl.handle.net/20.500.12483/600
dc.identifier.volume25en_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakTR-Dizinen_US
dc.language.isoenen_US
dc.relation.ispartofTurkish Journal of Physicsen_US
dc.relation.publicationcategoryDiğeren_US]
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectFiziken_US
dc.subjectUygulamalıen_US
dc.titleElectrical characterization of GaTe and GaTe:Cu semiconductor compoundsen_US
dc.typeOtheren_US

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