Çinko oksit ince filmlerin kemometrik yaklaşımla üretimi ve karakterizasyonu
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Dosyalar
Tarih
2022
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Hatay Mustafa Kemal Üniversitesi
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Malzeme biliminde öne çıkan konulardan biri saydam iletken oksit filmlerin uygulamaları ve temel özellikleridir. Bu tür malzemelerin karakteristik özelliği, düşük elektriksel direnç ve görünür bölgede yüksek geçirgenliğe sahip olmalarıdır. Optik ve elektriksel özelliklerinden dolayı çinko oksit (ZnO) saydam yarıiletken filmler son yıllarda oldukça dikkat çekmektedir. ZnO elektromanyetik spektrumun geniş bir aralığında yüksek geçirgenliğe sahip bir malzemedir. ZnO ince filmler fiziksel veya kimyasal kaplama teknikleriyle üretilebilmektedir. Yarıiletken malzemelerin yüksek kaliteye sahip olmasında malzemenin üretiminde kullanılan metot önemli yer tutar. ZnO saydam iletken oksitlerin optik, yapısal ve elektriksel özellikleri uygun üretim parametreleri kullanılarak iyileştirilebilir. Bu nedenle çalışmamızda çinko oksit yarıiletken ince filmlerin kemometrik yaklaşımla üretimi ve fiziksel özelliklerinin geliştirilmesi hedeflenmiştir. Bu çalışmada çinko oksit ince filmler kemometrik tekniklerle optimize edilen üretim koşullarında SILAR yöntemiyle üretilmiştir. ZnO ince filmlerin SILAR yöntemiyle üretiminde etkili faktörler incelenmiş ve merkezi kompozit dizayn (CCD) ile yanıt yüzey yöntemi (RSM) kullanılarak optimum üretim koşulları belirlenemiştir. Elde edilen çinko oksit saydam yarıiletken filmlerin kristal yapısı ve morfolojik özellikleri X ışını difraksiyonu (XRD) ve taramalı elektron mikroskobu (SEM) ile karakterize edilmiştir.
One of the prominent topics in material science is the applications and basic properties of transparent conductive oxide films. Such materials are characterized by low electrical resistance and high transmittance in the visible region. Due to its optical and electrical properties, zinc oxide (ZnO) transparent semiconductor films have attracted considerable attention in recent years. The ZnO is a high transmission material in a wide range of electromagnetic spectrum. ZnO thin films can be produced by physical or chemical coating techniques. The method used in the production of the material has an important place in the high quality of semiconductor materials. The optical, structural and electrical properties of ZnO transparent conductive oxides can be improved using appropriate production parameters. Therefore, in our study, it was aimed to produce zinc oxide semiconductor thin films with chemometric approach and to improve their physical properties. In this study, zinc oxide thin films were produced by SILAR method under production conditions optimized by chemometric techniques. The factors affecting the production of ZnO thin films by SILAR method were investigated and optimum production conditions were determined using the central composite design (CCD) and response surface method (RSM). The crystal structure and morphological properties of the obtained zinc oxide transparent semiconductor films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).
One of the prominent topics in material science is the applications and basic properties of transparent conductive oxide films. Such materials are characterized by low electrical resistance and high transmittance in the visible region. Due to its optical and electrical properties, zinc oxide (ZnO) transparent semiconductor films have attracted considerable attention in recent years. The ZnO is a high transmission material in a wide range of electromagnetic spectrum. ZnO thin films can be produced by physical or chemical coating techniques. The method used in the production of the material has an important place in the high quality of semiconductor materials. The optical, structural and electrical properties of ZnO transparent conductive oxides can be improved using appropriate production parameters. Therefore, in our study, it was aimed to produce zinc oxide semiconductor thin films with chemometric approach and to improve their physical properties. In this study, zinc oxide thin films were produced by SILAR method under production conditions optimized by chemometric techniques. The factors affecting the production of ZnO thin films by SILAR method were investigated and optimum production conditions were determined using the central composite design (CCD) and response surface method (RSM). The crystal structure and morphological properties of the obtained zinc oxide transparent semiconductor films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).
Açıklama
Anahtar Kelimeler
Kimya, Chemistry
